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Dr Xiangyuan (Carl) Cui

Position
Research Associate

Contact
Email:
Ph: + 61 (0)2 9114 0558
Fax: + 61 (0)2 9351 7526


Qualifications
PhD., 2003, Salford University (U.K.)
MSc., 1999, The University of Science and Technology of China
BSc., 1994, Qufu Normal University (China)


Background

  • 2010 – present: Research Fellow, ACMM, USyd.
  • 2004 – 2010 Research Associate, School of Physics, USyd.


Research Project
Self-labelled as a whisperer at the Nano-world, Dr Cui is interested in the microscopy & microanalysis of a range of materials through computational simulations. By performing the-state-of-the-art first-principles calculations, he is currently working with Prof. Simone Ringer and Dr Rongkun Zheng’s group members on the “Understanding/Designing Advanced Ferromagnetic Semiconductors’.

Other research interests

  • Defect induced magnetism in semiconductor
  • Superhard materials
  • Spin injection and magnetoresistence effects
  • Band-gap engineering and band-offset engineering

Selected publications

  1. 1. X. Y. Cui, B. Delley and C. Stampfl, ‘Bandgap engineering of polar and non-polar GaN/AlN superlattices from first principles’, Journal of Applied Physics (in press)
  2. 2. X. Y. Cui, D. J. Carter, B. Delley, S. H. Wei, A. J. Freeman, M. Fuchs and C. Stampfl, ‘Continuously tunable bandgap in GaN/AlN (0001) superlattices via built-in electric field’, Phys. Rev. B 81, 155301 (2010)
  3. X. Y. Cui, B. Delley, A. J. Freeman and C. Stampfl, ‘First-principles investigation of Mn -layer doped GaN/AlN/GaN (0001) tunneling junctions’, J. Appl. Phys. 106, 043711 (2009)
  4. X.-Y. Cui, J. E. Medvedeva, B. Delley, A. J. Freeman, and C. Stampfl, Built-in electric field assisted spin injection in Cr and Mn δ-layer doped AlN/GaN(0001) heterostructures from first-principles, Phys. Rev. B 78, 245317 (2008).
  5. X. Y. Cui, B. Delley, A. J. Freeman, and C. Stampfl, Neutral and charged embedded clusters of Mn in doped GaN from first principles, Phys. Rev. B 76 , 045201 (2007)
  6. X.Y. Cui, B. Delley, A. J. Freeman, and C. Stampfl, Magnetic metastability in tetrahedrally bonded magnetic III-nitride semiconductors, Phys. Rev. Lett. 97, 016402 (2006).
  7. X.Y. Cui, J. Medvedeva, A. J. Freeman, B. Delley, N. Newman, and C. Stampfl, Role of embedded clustering in dilute magnetic nitrides: Cr doped GaN, Phys. Rev. Lett. 95, 256404 (2005)

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