student profile: Mr Abdallah El Kass


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Thesis work

Thesis title: Electronics for Nanoscale Device interfacing

Supervisors: Philip Heng Wai LEONG , Craig JIN

Thesis abstract:

The PhD research focuses on VLSI electronic design to support interfaces with nano-scale systems. We are currently exploring two nano-scale systems: (1) Quantum computing systems and (2) nano-scale sensors (graphene or carbon nanotubes).
With regard to electronic interfaces to support Quantum computing systems, the primary research question is how to design appropriate read-out circuits that will operate at the cryogenic temperature of 4 K. Our first research step has been to design a test chip to study the operation of Hetero-Junction Bipolar transistors (HBTs). In particular, an array of HBTs were put on chip to test their matching properties at low temperatures. We also put single HBTs on the chip so we can characterise the operating curves at low temperatures. As well, single HBTs were put on chip to enable radio-frequency testing to obtain the S-parameters for the HBTs at low temperature.  With regard to electronic interfaces to support nano-scale sensors, we are just starting to explore this area with the first research question being how to bond or connect the graphene or carbon nanotubes to a VLSI chip. Graphene has been proved to be a possible option for integrating on a fabricated CMOS chip which will allow the integration on chip sensor systems.

Selected publications

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Journals

  • Dao, C., El Kass, A., Rahimi Azghadi, M., Jin, C., Scott, J., Leong, P. (2017). An enhanced MOSFET threshold voltage model for the 6�300 K temperature range. Microelectronics Reliability, 69, 36-39. [More Information]
  • Dao, C., El Kass, A., Jin, C., Leong, P. (2017). Impact of series resistance on bulk CMOS current matching over the 5�300 K temperature range. IEEE Electron Device Letters, 38(7), 847-850. [More Information]

2017

  • Dao, C., El Kass, A., Rahimi Azghadi, M., Jin, C., Scott, J., Leong, P. (2017). An enhanced MOSFET threshold voltage model for the 6�300 K temperature range. Microelectronics Reliability, 69, 36-39. [More Information]
  • Dao, C., El Kass, A., Jin, C., Leong, P. (2017). Impact of series resistance on bulk CMOS current matching over the 5�300 K temperature range. IEEE Electron Device Letters, 38(7), 847-850. [More Information]

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