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Dr Bin Chen

Postgraduate Student

Telephone +61 2 9351 8689
Fax +61 2 9351 7060

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Selected publications

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Journals

  • Chen, Z., Lei, W., Chen, B., Wang, Y., Liao, X., Tan, H., Zou, J., Ringer, S., Jagadish, C. (2012). Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? Nanoscale Research Letters, 7(1), 1-5.
  • Wang, J., Lu, C., Wang, Q., Xiao, P., Ke, F., Bai, Y., Shen, Y., Wang, Y., Chen, B., Liao, X., et al (2012). Self-healing in fractured GaAs nanowires. Acta Materialia, 60(15), 5593-5600.
  • Chen, B., Chen, J., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H. (2010). Electrical and optical properties of stacking faults in 4H-SiC devices. Journal of Electronic Materials, 39(6), 684-687.
  • Chen, B., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H. (2010). Evidence for a general mechanism modulating carrier lifetime in SiC. Physical Review B (Condensed Matter and Materials Physics), 81(23), 233203-1-233203-4.
  • Chen, B., Matsuhata, H., Sekiguchi, T., Ohyanagi, T., Kinoshita, A., Okumura, H. (2010). Pinning of recombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH1 complex. Applied Physics Letters, 96(21), 212110-1-212110-3.
  • Lee, W., Chen, J., Chen, B., Chang, J., Sekiguchi, T. (2009). Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon. Applied Physics Letters, 94(112103), 112103-1-112103-3.
  • Sekiguchi, T., Lee, W., Chen, J., Chen, B. (2009). D-line emission from small angle grain boundaries in multicrystalline Si. Solid State Phenomena, 156-158, 561-565.
  • Ohyanagi, T., Chen, B., Sekiguchi, T., Yamaguchi, H., Matsuhata, H. (2009). EBIC analysis of breakdown failure point in 4H-SiC PiN diodes. Materials Science Forum, 615-617, 707-710.
  • Chen, B., Chen, J., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H., Fabbri, F. (2009). Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films. Superlattices and Microstructures, 45(4-5), 295-300.
  • Chen, B., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H. (2009). Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers. Journal of Applied Physics, 106(7), 074502-1-074502-4.
  • Chen, J., Chen, B., Lee, W., Fukuzawa, M., Yamada, M., Sekiguchi, T. (2009). Grain boundaries in multicrystalline Si. Solid State Phenomena, 156-158, 19-26.
  • Chen, B., Chen, J., Sekiguchi, T., Saito, M., Kimoto, K. (2009). Structural characterization and iron detection at ∑3 grain boundaries in multicrystalline silicon. Journal of Applied Physics, 105(113502), 113502-1-113502-5.
  • Chen, J., Chen, B., Sekiguchi, T., Fukuzawa, M., Yamada, M. (2008). Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon. Applied Physics Letters, 93(11), 112105-1-112105-3.
  • Chen, B., Chen, J., Sekiguchi, T., Kinoshita, A., Matsuhata, H., Yamaguchi, H., Nagai, I., Okumura, H. (2008). Electron-beam-induced current study of electrical activity of dislocations in 4H-SiC homoeptaxial film. Journal of Materials Science: Materials in Electronics, 19, S219-S223.
  • Chen, B., Chen, J., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H., Fabbri, F. (2008). Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode. Applied Physics Letters, 93(033514), 033514-1-033514-3.
  • Chen, B., Pan, W. (2007). Dielectric Properties of Boron Nitride-Aluminium Nitride Composites Prepared by Spark Plasma Sintering. Key Engineering Materials, 336--338, 796-798.
  • Chen, B., Pan, W. (2005). Spark plasma sintering of Boron Nitride-Aluminum Nitride composites. Rare Metal Materials and Engineering, 34(1), 570-573.

2012

  • Chen, Z., Lei, W., Chen, B., Wang, Y., Liao, X., Tan, H., Zou, J., Ringer, S., Jagadish, C. (2012). Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? Nanoscale Research Letters, 7(1), 1-5.
  • Wang, J., Lu, C., Wang, Q., Xiao, P., Ke, F., Bai, Y., Shen, Y., Wang, Y., Chen, B., Liao, X., et al (2012). Self-healing in fractured GaAs nanowires. Acta Materialia, 60(15), 5593-5600.

2010

  • Chen, B., Chen, J., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H. (2010). Electrical and optical properties of stacking faults in 4H-SiC devices. Journal of Electronic Materials, 39(6), 684-687.
  • Chen, B., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H. (2010). Evidence for a general mechanism modulating carrier lifetime in SiC. Physical Review B (Condensed Matter and Materials Physics), 81(23), 233203-1-233203-4.
  • Chen, B., Matsuhata, H., Sekiguchi, T., Ohyanagi, T., Kinoshita, A., Okumura, H. (2010). Pinning of recombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH1 complex. Applied Physics Letters, 96(21), 212110-1-212110-3.

2009

  • Lee, W., Chen, J., Chen, B., Chang, J., Sekiguchi, T. (2009). Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon. Applied Physics Letters, 94(112103), 112103-1-112103-3.
  • Sekiguchi, T., Lee, W., Chen, J., Chen, B. (2009). D-line emission from small angle grain boundaries in multicrystalline Si. Solid State Phenomena, 156-158, 561-565.
  • Ohyanagi, T., Chen, B., Sekiguchi, T., Yamaguchi, H., Matsuhata, H. (2009). EBIC analysis of breakdown failure point in 4H-SiC PiN diodes. Materials Science Forum, 615-617, 707-710.
  • Chen, B., Chen, J., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H., Fabbri, F. (2009). Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films. Superlattices and Microstructures, 45(4-5), 295-300.
  • Chen, B., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H. (2009). Electron-beam-induced current and cathodoluminescence study of dislocation arrays in 4H-SiC homoepitaxial layers. Journal of Applied Physics, 106(7), 074502-1-074502-4.
  • Chen, J., Chen, B., Lee, W., Fukuzawa, M., Yamada, M., Sekiguchi, T. (2009). Grain boundaries in multicrystalline Si. Solid State Phenomena, 156-158, 19-26.
  • Chen, B., Chen, J., Sekiguchi, T., Saito, M., Kimoto, K. (2009). Structural characterization and iron detection at ∑3 grain boundaries in multicrystalline silicon. Journal of Applied Physics, 105(113502), 113502-1-113502-5.

2008

  • Chen, J., Chen, B., Sekiguchi, T., Fukuzawa, M., Yamada, M. (2008). Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon. Applied Physics Letters, 93(11), 112105-1-112105-3.
  • Chen, B., Chen, J., Sekiguchi, T., Kinoshita, A., Matsuhata, H., Yamaguchi, H., Nagai, I., Okumura, H. (2008). Electron-beam-induced current study of electrical activity of dislocations in 4H-SiC homoeptaxial film. Journal of Materials Science: Materials in Electronics, 19, S219-S223.
  • Chen, B., Chen, J., Sekiguchi, T., Ohyanagi, T., Matsuhata, H., Kinoshita, A., Okumura, H., Fabbri, F. (2008). Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode. Applied Physics Letters, 93(033514), 033514-1-033514-3.

2007

  • Chen, B., Pan, W. (2007). Dielectric Properties of Boron Nitride-Aluminium Nitride Composites Prepared by Spark Plasma Sintering. Key Engineering Materials, 336--338, 796-798.

2005

  • Chen, B., Pan, W. (2005). Spark plasma sintering of Boron Nitride-Aluminum Nitride composites. Rare Metal Materials and Engineering, 34(1), 570-573.
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